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Home > The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 > Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 |
Springer US
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS
Authors

ARI Id

1664228600167_843078

Access

Not Available Free

Pages

319-328

DOI

10.1007/978-1-4899-1588-7_34

Chapter URL

https://rd.springer.com/chapter/10.1007/978-1-4899-1588-7_34

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Table of Contents of Book
Showing 1 to 20 of 64 entries
Chapters/HeadingsAuthor(s)PagesInfo
i-xvi
1-2
3-6
7-13
15-21
23-30
31-41
43-44
45-54
55-62
63-70
71-79
81-90
91-98
99-108
109-116
117-118
119-129
131-144
145-156
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 64 entries
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