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Home > Ion Implantation in Semiconductors and Other Materials > Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon
Ion Implantation in Semiconductors and Other Materials |
Billy Crowder
Springer US
Ion Implantation in Semiconductors and Other Materials
Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon
Authors

W. K. Hofker; H. W. Werner; D. P. Oosthoek; H. A. M. de Grefte

ARI Id

1664298304654_1115439

Access

Not Available Free

Pages

133-145

DOI

10.1007/978-1-4684-2064-7_13

Chapter URL

https://rd.springer.com/chapter/10.1007/978-1-4684-2064-7_13

Table of Contents of Book
Showing 1 to 20 of 66 entries
Chapters/HeadingsAuthor(s)PagesInfo
Front Matter
i-xii
Front Matter
1-1
Radiation Damage in Metals and Semiconductors
W. Frank
3-16
Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon
C. B. Norris; K. L. Brower; F. L. Vook
17-17
Internal Friction Study of Point Defects in Boron-Implanted Silicon
S. I. Tan; B. S. Berry; W. F. J. Frank
19-30
Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation
T. Matsumori; T. Kobayashi; H. Maekawa; T. Izumi
31-38
Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs
H. J. Stein
39-48
Defect Aggregation in Ion-Implanted GaAs
G. W. Arnold
49-58
On Silicon Amorphisation During Different Mass Ions Implantation
E. C. Baranova; V. M. Gusev; Yu. V. Martynenko; C. V. Starinin; I. B. Hailbullin
59-71
Front Matter
73-73
The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals
P. Blood; G. Dearnaley; M. A. Wilkins
75-85
Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance
J. C. C. Tsai; J. M. Morabito; R. K. Lewis
87-98
The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Si
F. H. Eisen; J. D. Haskell; E. Rimini; J. W. Mayer
99-110
Concentration Profiles of Arsenic Implanted in Silicon
M. Iwaki; K. Gamo; K. Masuda; S. Namba; S. Ishihara; I. Kimura
111-118
Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon
K. Wittmaack; J. Maul; F. Schulz
119-131
Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon
W. K. Hofker; H. W. Werner; D. P. Oosthoek; H. A. M. de Grefte
133-145
Channeling Analysis and Electrical Behavior of Boron Implanted Silicon
Youichi Akasaka; Kazuo Horie
147-157
Si-SiO2 Interface States Induced by Implantation of Various Ion Species
Takashi Tokuyama; Isao Yoshida; Terunori Warabisako
159-168
Front Matter
169-169
Theory of the Spatial Distributions of Ion Range and Energy Deposition
David K. Brice
171-192
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 66 entries
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