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Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 |
Springer Vienna
Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

Atomistic Modeling of Defect Diffusion in SiGe
Authors

ARI Id

1664319009609_1194226

Access

Not Available Free

Pages

9-12

DOI

10.1007/978-3-211-72861-1_2

Chapter URL

https://rd.springer.com/chapter/10.1007/978-3-211-72861-1_2

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