Search from the table of contents of 2.5 million books
Advanced Search (Beta)
Home > Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 > Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches

Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 |
Springer Vienna
Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
Authors

ARI Id

1664319009609_1194227

Access

Not Available Free

Pages

13-16

DOI

10.1007/978-3-211-72861-1_3

Chapter URL

https://rd.springer.com/chapter/10.1007/978-3-211-72861-1_3

Loading...
Table of Contents of Book
Chapters/HeadingsAuthor(s)PagesInfo
Loading...
Chapters/HeadingsAuthor(s)PagesInfo
Similar Books
Loading...
Similar Chapters
Loading...
Similar Thesis
Loading...

Similar News

Loading...
Similar Articles
Loading...
Similar Article Headings
Loading...