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Home > Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 > Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 |
Tibor Grasser; Siegfried Selberherr
Springer Vienna
Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
Authors

E. Tsukuda; Y. Kamakura; H. Takashino; T. Okagaki; T. Uchida; T. Hayashi et al.

ARI Id

1664319009609_1194231

Access

Not Available Free

Pages

29-32

DOI

10.1007/978-3-211-72861-1_7

Chapter URL

https://rd.springer.com/chapter/10.1007/978-3-211-72861-1_7

Table of Contents of Book
Showing 1 to 20 of 111 entries
Chapters/HeadingsAuthor(s)PagesInfo
Front Matter
i-xv
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation
Mark R. Pinto
1-8
Atomistic Modeling of Defect Diffusion in SiGe
P. Castrillo; R. Pinacho; J. E. Rubio; L. M. Vega; M. Jaraiz
9-12
Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
A. Martinez-Limia; C. Steen; P. Pichler; N. Gupta; W. Windl; S. Paul et al.
13-16
Molecular Dynamics Modeling of Octadecaborane Implantation into Si
Luis A. Marqués; L. Pelaz; I. Santos; P. López; M. Aboy
17-20
High Performance, Strained-Ge, Heterostructure p-MOSFETs
Tejas Krishnamohan; Donghyun Kim; Christoph Jungemann; Anh-Tuan Pham; Bernd Meinerzhagen; Yoshio Nishi et al.
21-24
Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
Hiroshi Takeda; Takeo Ikezawa; Michihito Kawada; Masami Hane
25-28
Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
E. Tsukuda; Y. Kamakura; H. Takashino; T. Okagaki; T. Uchida; T. Hayashi et al.
29-32
Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
L. P. Huang; K. C. Ku; Y. M. Sheu; C. F. Nieh; C. H. Chen; H. Chang et al.
33-36
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
H. Ceric; A. Nentchev; E. Langer; S. Selberherr
37-40
Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias
Chaffra A. Awo-Affouda; Max O. Bloomfield; Timothy S. Cale
41-44
Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology
Byungjoon Hwang; Yero Lee; Jeong-Guk Min; Hwakyung Shin; Namsu Lim; Sungjin Kim et al.
45-48
Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)
Jinyu Zhang; Wei Xiong; Min-Chun Tsai; Yan Wang; Zhiping Yu
49-52
Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment
Andreas Hössinger; Zoran Djurić; Artem Babayan
53-56
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
C. Fiegna; M. Braccioli; S. C. Brugger; F. M. Bufler; P. Dollfus; V. Aubry-Fortuna et al.
57-60
Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs
Seonghoon Jin; Massimo V. Fischetti; Ting-wei Tang
61-64
Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
M. -A. Jaud; S. Barraud; J. Saint-Martin; A. Bournel; P. Dollfus; H. Jaouen
65-68
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
C. Jungemann
69-72
Energy Conservation in Collisional Broadening
Z. Aksamija; U. Ravaioli
73-76
A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells
Jongchol Kim; Chia-Yu Chen; Robert W. Dutton
77-80
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 111 entries
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