Chapter: Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

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Home > Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 > Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007 |

Tibor Grasser; Siegfried Selberherr

Springer Vienna

Simulation of Semiconductor Processes and Devices 2007: SISPAD 2007

Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

Chapter Info

Authors

Andreas Hössinger; Zoran Djurić; Artem Babayan

ARI Id

1664319009609_1194237

Access

Not Available Free

Pages

53-56

DOI

10.1007/978-3-211-72861-1_13

Chapter URL

https://rd.springer.com/chapter/10.1007/978-3-211-72861-1_13

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