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Home > Ion Implantation in Semiconductors: Science and Technology > Compensating Layers in GaAs by Ion Implantation: Application to Integrated Optics
Ion Implantation in Semiconductors: Science and Technology |
Susumu Namba
Springer US
Ion Implantation in Semiconductors: Science and Technology
Compensating Layers in GaAs by Ion Implantation: Application to Integrated Optics
Authors

P. N. Favennec; E. V. K. Rao

ARI Id

1664544289322_2132516

Access

Not Available Free

Pages

65-71

DOI

10.1007/978-1-4684-2151-4_8

Chapter URL

https://rd.springer.com/chapter/10.1007/978-1-4684-2151-4_8

Table of Contents of Book
Showing 1 to 20 of 105 entries
Chapters/HeadingsAuthor(s)PagesInfo
Front Matter
i-xv
Front Matter
1-1
Ion Implantation In III–V Compounds
F. H. Eisen
3-17
Anodic Oxidation and Profile Determination of Ion Implanted Semi-Insulating GaAs
H. Müller; J. Gyulai; J. W. Mayer; F. H. Eisen; B. Welch
19-25
Encapsulation of Ion Implanted GaAs
P. L. F. Hemment; B. J. Sealy; K. G. Stephens
27-34
Ion Implantation of Cd and Te in GaAs Crystals
K. Gamo; M. Takai; M. S. Lin; K. Masuda; S. Namba
35-40
Implantation of Silicon Into Gallium Arsenide
T. Miyazaki; M. Tamura
41-46
The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implanted Gallium Arsenide
Y. Kushiro; T. Kobayashi
47-53
Front Matter
55-55
The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0. 6P0. 4
E. B. Stoneham; J. F. Gibbons
57-63
Compensating Layers in GaAs by Ion Implantation: Application to Integrated Optics
P. N. Favennec; E. V. K. Rao
65-71
Electrical Properties of Proton Bombarded N-Type GaAs
H. Harada; M. Fujimoto
73-81
Photoluminescence of Zinc Implanted n-Type GaAs
T. Itoh; T. Matsumoto; J. Kasahara
83-88
Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantation
Y. Makita; S. Gonda; H. Tanoue; T. Tsurushima; S. Maekawa
89-94
Electrical and Photoluminescent Properties of Zinc Implanted GaAs0. 62P0. 38
H. Okabayashi
95-100
Defect-Free Nitrogen Implantation into GaP
T. Shimada; Y. Shiraki; K. F. Komatsubara
101-106
Ion Implantations of Mg and Zn into n-Type GaP
T. Inada; Y. Ohnuki
107-114
In-Depth Profile Detection Limits of Nitrogen in GaP, Nitrogen, Oxygen and Fluorine in Si by SIMS and AES
J. C. C. Tsai; J. M. Morabito
115-124
Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaP
Hideki Matsumura; Seijiro Furukawa
125-131
ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP
T. Matsumori; K. Miyazaki; S. Shigetomi
133-139
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 105 entries
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