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Home > Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices > Piezoresponse Force Microscopy (PFM)
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices |
Cheol Hwang; Hiroshi Funakubo andUwe Schroeder
Woodhead Publishing
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
Piezoresponse Force Microscopy (PFM)
Authors

Nina Balke; Tony Schenk; Igor Stolichnov; Alexei Gruverman

ARI Id

1665433279793_16783637

Access

Not Available Free

Pages

291-316

Table of Contents of Book
Showing 1 to 20 of 21 entries
Chapters/HeadingsAuthor(s)PagesInfo
Fundamentals of Ferroelectric and Piezoelectric Properties
Jon F. Ihlefeld
Introduction
Min Hyuk Park; Uwe Schroeder
47-48
Ferroelectric Films by Physical Vapor Deposition and Ion Implantation
Akira Toriumi; Lun Xu; Shigehisa Shibayama; Shinji Migita
103-125
Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties
Min Hyuk Park; Tony Schenk; Sergej Starschich; Chris M. Fancher; Han Joon Kim; Ulrich Böttger; Cheol Seong Hwang; Akira Toriumi; Xuan Tian; Uwe Schroeder
145-172
Temperature Dependent Phase Transitions in Hafnia Based Ferroelectrics
Structural Origin of Temperature-Dependent Ferroelectricity
Min Hyuk Park; Takao Shimizu; Hiroshi Funakubo; Uwe Schroeder
193-216
Pyroelectric and Electrocaloric Effects and Their Applications
Min Hyuk Park; Michael Hoffmann; Cheol Seong Hwang
217-244
Thermodynamics of Phase Stability and Ferroelectricity From First Principles
Christopher Künneth; Rohit Batra; George A Rossetti; Rampi Ramprasad; Alfred Kersch
Physical Characterization on a Nanometer Scale
Piezoresponse Force Microscopy (PFM)
Nina Balke; Tony Schenk; Igor Stolichnov; Alexei Gruverman
291-316
Transmission Electron Microscopy (STEM and TEM)
Everett D. Grimley; James M. LeBeau
317-340
Impact of Electrodes on the Ferroelectric Properties
Min Hyuk Park; Tony Schenk; Cheol Seong Hwang; Uwe Schroeder
Electrical Field Cycling Behavior
Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors
Milan Pešić; Luca Larcher
399-411
Ferroelectric Hafnium Oxide Based Devices
Ferroelectric One Transistor/One Capacitor Memory Cell
Milan Pešić; Uwe Schroeder; Thomas Mikolajick
413-424
Antiferroelectric One Transistor/One Capacitor Memory Cell
Milan Pešić; Uwe Schroeder
425-435
Ferroelectric Tunnel Junction
Shosuke Fujii; Masumi Saitoh
437-449
Ferroelectric Field Effect Transistor
Johannes Mueller; Stefan Slesazeck; Thomas Mikolajick
451-471
Ferroelectric Devices for Logic in Memory
Evelyn T. Breyer; Stefan Slesazeck
495-513
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 21 entries
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