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Advances in Non-volatile Memory and Storage Technology |
Y. Nishi
Woodhead Publishing
Advances in Non-volatile Memory and Storage Technology
Ferroelectric random access memory (FRAM) devices
Authors

T. Eshita; T. Tamura; Y. Arimoto

ARI Id

1665471772066_16925709

Access

Not Available Free

Pages

434-454

Table of Contents of Book
Showing 1 to 18 of 18 entries
Chapters/HeadingsAuthor(s)PagesInfo
Overview of non-volatile memory technology: markets, technologies and trends
R. Bez; A. Pirovano
Improvements in Flash technologies
Developments in 3D-NAND Flash technology
R. Shirota
27-74
Multi-bit NAND Flash memories for ultra high density storage devices
R. Micheloni; L. Crippa
75-119
Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures
G. Molas; L. Masoero; V. Della Marca; G. Gay; B. De Salvo
120-157
Phase change memory (PCM) and resistive random access memory (RRAM) technologies
Phase change memory (PCM) materials and devices
S. Raoux; T.J. Ibm
161-199
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques
M. Longo
200-230
Nanowire phase change memory (PCM) technologies: properties and performance
M. Longo
231-261
Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures
K. Kamiya; M.Y. Yang; B. Magyari-Köpe; Y. Nishi; K. Shiraishi
262-284e
Metal oxide resistive random access memory (RRAM) technology
G. Bersuker; D.C. Gilmer
288-340
Conductive bridge random access memory (CBRAM) technology
J.R. Jameson; M. Van Buskirk
341-369
Memristors for non-volatile memory and other applications
G.M. Huang; Y. Ho
370-397
Alternative emerging technologies
WITHDRAWN: Molecular, polymer and hybrid organic memory devices (OMDs)
401
Nano-electromechanical random access memory (RAM) devices
W. Kwon
415-433
Ferroelectric random access memory (FRAM) devices
T. Eshita; T. Tamura; Y. Arimoto
434-454
Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology
H. Ohno; T. Endoh; T. Hanyu; Y. Ando; S. Ikeda
455-494
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 18 of 18 entries
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