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Home > Volume 79, Number 2 October 16 > Process-Induced Defect States in GaAsP Light Emitting Diodes
Volume 79, Number 2 October 16 |
Görlich
De Gruyter
Volume 79, Number 2 October 16
Process-Induced Defect States in GaAsP Light Emitting Diodes
Authors

I. D. Henning; H. Thomas

ARI Id

1666836301070_7909083

Access

Not Available Free

Pages

567

DOI

10.1515/9783112500965-030

Chapter URL

https://www.degruyter.com/document/doi/10.1515/9783112500965-030/html

Table of Contents of Book
Showing 1 to 20 of 64 entries
Chapters/HeadingsAuthor(s)PagesInfo
Frontmatter
I
Classification Scheme
II
Contents
339
Brillouin Scattering in Single Crystals of Carbon Tetraiodide
R. B. Yadav
345
Excess Concentration of Point Defects in Alkali Halide Crystals Exposed to Ultrasonic Waves
N. A. Tyapunina; Yu. A. Ivashkin
351
Amorphization of Neutron-Irradiated Yttrium Iron Garnet
Yu. G. Chukalkin; V. R. Shtirts; B. N. Goshchitskii
361
Dynamical Theory of Twin Boundary Contrast Including Effects of Common Reflections
S. S. Sheinin; R. Perez
367
The Effect of Dislocations on the Interaction Processes of Point and Group Radiation Defects in Silicon
L. A. Kazakevich; P. F. Lugakov
377
Parameters of Defect Clusters in Irradiated Silicon and a Method for Their Determining
Y. I . Kuznetsov; P. F. Lugakov
381
The Influence of Surface Roughness on the Coercive Field of the Nearly Non-Magnetostrictive Amorphous Ferromagnetic Alloy Co55Ni10Fe5Si11B16
W. Beck; H. Kronmüller
389
Analysis of Heavy-Ion Sputtering Based on the Shock Wave Model
B. Rauschenbach; K. Hohmuth
395
A Method for the Determination of a Static Fatigue Limit of Glasses
W. Gräfe
403
Thermal Expansion of the Diamond-Like Semiconducting Compound ZnSiP2 within the Temperature Range 20 to 300 K
P. Deus; H. A. Schneider
411
Influence of Lateral Charge Inhomogeneities in MOS Structures on the Determination of the Interface State Density Distribution from HF CV Curves
F. Fenske
417
Fracture of Hydrostatically Compressed NaCl Single Crystals
G. Ya. Akimov; I. Yu. Prokhorov
423
Radiation Diffusion-Dislocation Creep in the Presence of Weertman Mechanism of Dislocation Multiplication
V. G. Chudinov; V. I. Protasov
433
Analytical Theory of the Growth of Crystal Faces
H. Pfeiffer
445
Electrical, Magnetic, and Structural Characterisation of the 1: 2 and 1: 3 TCNQ Salts of 1, 2-Bis(4-Pyridinium)Ethane
G. J. Ashwell; J. G. Allen; G. H. Cross; I. W. Nowell
455
Vacancy Effect on the Transition Temperature of Magnetite
E. Gmelin; N. Lenge; H. Kronmüller
465
Dependence of the Electronic and Optical Properties of Unhydrogenated a-Si on Preparation Conditions
S. A. Abo-Namous; Y. Zaka; R. W. Fane
477
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 64 entries
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