Chapter: Ferroelectric Probe Storage Devices

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Home > Emerging Non-Volatile Memories > Ferroelectric Probe Storage Devices

Emerging Non-Volatile Memories |

Seungbum Hong; Orlando Auciello; Dirk Wouters

Springer US

Ferroelectric Probe Storage Devices

Chapter Info

Authors

Seungbum Hong; Yunseok Kim

ARI Id

1674219760777_3339076

Access

Not Available Free

Pages

259-273

DOI

10.1007/978-1-4899-7537-9_7

Chapter URL

https://rd.springer.com/chapter/10.1007/978-1-4899-7537-9_7

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Chapters/Headings	Author(s)	Pages	Info
Front Matter		i-xii
Front Matter		1-1
Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories	Orlando Auciello; Carlos A. Paz de Araujo; Jolanta Celinska	3-35
Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits	B. Dieny; R. Sousa; G. Prenat; L. Prejbeanu; O. Redon	37-101
Emerging Multiferroic Memories	Lane W. Martin; Ying-Hao Chu; R. Ramesh	103-166
Front Matter		167-167
Phase-Change Materials for Data Storage Applications	Dominic Lencer; Martin Salinga; Matthias Wuttig	169-193
Emerging Oxide Resistance Change Memories	Myoung-Jae Lee	195-218
Oxide Based Memristive Nanodevices	J. Joshua Yang; Gilberto Medeiros-Ribeiro	219-256
Front Matter		257-257
Ferroelectric Probe Storage Devices	Seungbum Hong; Yunseok Kim	259-273
Chapters/Headings	Author(s)	Pages	Info

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