Home > Amorphous and polycrystalline thin-film silicon science and technology--2008: symposium held March 25-28, 2008, San Francisco, California, U. S. A. / > Self-Aligned Amorphous Silicon Thin-Film Transistors with Mobility Above 1 cm[superscript 2]V[superscript -1]s[superscript -1] Fabricated at 300[degrees]C on Clear Plastic Substrates
Self-Aligned Amorphous Silicon Thin-Film Transistors with Mobility Above 1 cm[superscript 2]V[superscript -1]s[superscript -1] Fabricated at 300[degrees]C on Clear Plastic Substrates
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