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Home > Semiconductor defect engineering--materials, synthetic structures and devices: symposium held March 28-April 1, 2005, San Francisco, California, U. S. A. / > Analysis of nanoscale deformation in GaAs(100): towards patterned growth of quantum dots
Semiconductor defect engineering--materials, synthetic structures and devices: symposium held March 28-April 1, 2005, San Francisco, California, U. S. A. / |
Ashok, S.
Materials Research Society,
Semiconductor defect engineering--materials, synthetic structures and devices: symposium held March 28-April 1, 2005, San Francisco, California, U. S. A. /
Analysis of nanoscale deformation in GaAs(100): towards patterned growth of quantum dots
Authors

Curtis R. Taylor, Eric A. Stach, Ajay P. Malshe and Gregory Salamo

ARI Id

1674932787458_51347505

Access

Not Available Free

Table of Contents of Book
Showing 1 to 20 of 86 entries
Chapters/HeadingsAuthor(s)PagesInfo
Grown-in and radiation-induced defects in 4H-SiC
T. A. G. Eberlein, R. Jones, P. R. Briddon and S. Oberg
A study of V[superscript 3+] and the vanadium acceptor level in semi-insulating 6H-SiC
Wonwoo Lee and Mary E. Zvanut
Role of the substrate doping in the activation of Fe[superscript 2+] centers in Fe implanted InP
T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G. Impellizzeri and F. Priolo
Growth and electrical properties of ZnO grown by closed space vapor transport on sapphire substrates
J. Mimila-Arroyo, J. F. Rommeluere, M. Barbe, F. Jomard, A. Tromson-Carli, O. Gorochov, Y. Marfaing and P. Galtier
Chromium diffusion doping of commercial ZnSe and CdTe windows for mid-infrared solid-state laser applications
U. Hommerich, I. K. Jones, EiEi Nyein and S. B. Trivedi
Structural and optical properties of thin metal-oxide films (ZnO and SnO[subscript x]) deposited on glass and silicon substrates
Serekbol Zh. Tokmoldin, Bulat N. Mukashev, Nurzhan B. Beisenkhanov, Azamat B. Aimagambetov and Irina V. Ovcharenko
Structural characterization of GaN epilayers grown on patterned sapphire substrates
Chang-Soo Kim, Ji-Hyun Moon, Sang-Jun Lee, Sam-Kyu Noh, Je Won Kim, Kyuhan Lee, Yong Dae Choi and Jay P. Song
Effect of substrate orientation on the growth rate and surface morphology on GaSb grown by metal-organic vapor phase epitaxy
Jian Yu and Ishwara B. Bhat
Pt[subscript s]-O[subscript 1] complex formation in platinum diffused silicon
Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gerard Ducreux and Andre Lhorte
Diffusion of fluorine-silicon interstitial complex in crystalline silicon
Scott A. Harrison, Thomas F. Edgar and Gyeong S. Hwang
Impacts of back surface conditions on the behavior of oxygen in heavily arsenic doped czochralski silicon wafers
Q. Wang, Manmohan Daggubati, Hossein Paravi, Rong Yu and Xiao Feng Zhang
Influence of oxygen vacancies and strain on electronic reliability of SiO[subscript 2-x] films
Ken Suzuki, Yuta Ito, Hideo Miura and Tetsuo Shoji
Identification and characterization of submicron defects for semiconductor processing
Wei Liu, Aime Fausz, John Svoboda, Brian Butcher, Rick Williams and Steve Schauer
Experimental observation of formation processes in Si/SiO[subscript 2] interface defects using in situ UHV-ESR system
N. Mizuochi, W. Futako and S. Yamasaki
Efficient detection of oxygen vacancy double donors in capacitors with ultra-thin Ta[subscript 2]O[subscript 5] films for DRAM applications by zero-bias thermally stimulated current spectroscopy
W. S. Lau, L. Zhong, Taejoon Han and Nathan P. Sandler
Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs band offsets
Homan B. Yuen, Robert Kudrawiec, K. Ryczko, S. R. Bank, M. A. Wistey, H. P. Bae, J. Misiewicz and J. S. Harris, Jr.
Ultra-shallow junctions for the 65 nm node based on defect and stress engineering
Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik and Susan Felch
N+/P and P+/N junctions in strained Si on strain relaxed SiGe buffers: the effect of defect density and layer structure
G. Eneman, E. Simoen, R. Delhougne, P. Verheyen, M. Ries, R. Loo, M. Caymax, W. Vandervorst and K. De Meyer
Morphology, defects and thermal stability of SiGe grown on SOI
Qianghua Xie, Mike Kottke, Xiangdong Wang, Mike Canonico, Ted White, Bich-Yen Nguyen, Alex Barr, Shawn Thomas and Ran Liu
Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy
Dalaver H. Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt and Robert Hull
Chapters/HeadingsAuthor(s)PagesInfo
Showing 1 to 20 of 86 entries
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