Chapter: 8. Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials

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Home > InP-based materials and devices: physics and technology / > 8. Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials

InP-based materials and devices: physics and technology / |

Wada, O.; Hasegawa, H.

Wiley,

InP-based materials and devices: physics and technology /

8. Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials

Chapter Info

Authors

Hideki Hasegawa

ARI Id

1675312240032_52278409

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Chapters/Headings	Author(s)	Pages	Info
1. Introduction	Osamu Wada and Hideki Hasegawa
2. Demand for InP-Based Optoelectronic Devices and Systems	Junichi Yoshida
3. Applications of InP-Based Transistors for Microwave and Millimeter-Wave Systems	Mehran Matloubian
4. Material Physics of InP-Based Compound Semiconductors	Yoshikazu Takeda
5. InP Bulk Crystal Growth and Characterization	David Francis Bliss
6. Metal-Organic Chemical Vapor Deposition of InP-Based Materials	Takashi Fukui
7. InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources	Harald Heinecke
8. Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials	Hideki Hasegawa
9. Dry Process Technique for InP-Based Materials	Kiyoshi Asakawa
10. Heterostructure Field Effect Transistors and Circuit Applications	Juergen Dickmann
11. Heterojunction Bipolar Transistors and Circuit Applications	Hin-Fai Frank Chau and William Liu
12. Lasers, Amplifiers, and Modulators Based on InP-Based Materials	Niloy K. Dutta
13. Photodiodes and Receivers Based on InP Materials	Kenko Taguchi
14. Hybrid Integration and Packaging of InP-Based Optoelectronic Devices	Werner Hunziker.
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