"Assessment of a Unipolar Pulsed Ramp for the Characterisation of MOS Gate Oxide Reliability"

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Book	Author(s)	Year	Publisher
Hot-Carrier Reliability of MOS VLSI Circuits	Yusuf Leblebici; Sung-Mo (Steve) Kang	1993	Springer US
Reliability Characterisation of Electrical and Electronic Systems	J. Swingler	2015	Woodhead Publishing
Carbon and Oxide Nanostructures: Synthesis, Characterisation and Applications	Noorhana Yahya	2011	Springer Berlin Heidelberg
Hazard Assessment of Ethylene Oxide	Leon Golberg	2017	Routledge
Hazard assessment of ethylene oxide	Leon Golberg	1986	CRC Press
Historic Mortars: Characterisation, Assessment and Repair	Jan Válek; John J. Hughes; Caspar J. W. P. Groot	2012	Springer Netherlands
Solid Oxide Fuel Cell Lifetime and Reliability	Nigel Brandon; Paul Boldrin and Enrique Ruiz-Trejo	2017	Academic Press
Rapid Reliability Assessment of VLSICs	A.P. Dorey; B.K. Jones; A.M.D. Richardson; Y.Z. Xu	1990	Springer US
[Environmental assessment for Pelican Point boat ramp and parking lots improvements]	Montana. Department of Fish, Wildlife, and Parks. Region 4	1999	Montana Department of Fish, Wildlife & Parks, Region Four
Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications	Takashi Hori	1997	Springer Berlin Heidelberg
Simulation-based reliability assessment for structural engineers /	Marek, Pavel.; Gus̆tar, Milan.; Anagnos, Thalia.	[1996], ©1996.	CRC Press,
Reliability and risk assessment /	Andrews, J. D.; Moss, T. R.	1993.	Copublished in the United States with J. Wiley,
Reliability and validity assessment /	Carmines, Edward G.; Zeller, Richard A.	©1979.	Sage Publications,
Loading ramp for cattle	United States. Department of Agriculture	1968	U.S. Dept. of Agriculture
Routledge Handbook of Landscape Character Assessment: Current Approaches to Characterisation and Assessment	Graham Fairclough; Ingrid Sarlöv Herlin; Carys Swanwick	2018	Routledge
A Guide to Practical Human Reliability Assessment	B. Kirwan	1994	Routledge
Background gas pressure dependence of unipolar arcing on soda lime glass and plastic induced by a C0 pulsed laser	Adam R. Wojtowich	1988
OSS Reliability Measurement and Assessment	Shigeru Yamada; Yoshinobu Tamura	1st ed. 2016	Springer International Publishing
Practical safety and reliability assessment	K.C. Hignett	1996	Routledge
Reliability, maintainability, and availability assessment	Mitchell O. Locks	1973	Spartan Books; [distributed by] Hayden Book Co., Rochelle Park, N.J.
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Chapter	Author(s)	Book	Book Authors	Year	Publisher
Assessment of a Unipolar Pulsed Ramp for the Characterisation of MOS Gate Oxide Reliability	A. Martin, P. O'Sullivan and A. Mathewson	1995 International Integrated Reliability Workshop: final report, Stanford Sierra Camp, Lake Tahoe, California, October 22-25, 1995 /	Ieee Reliability Society	[1996], ©1996.	IEEE Service Center,
Multiple-Gate Metal-Oxide-Semiconductor (MOS) System	Samar K. Saha	FinFET Devices for VLSI Circuits and Systems	Samar K. Saha	2020	Routledge
MOS process characterisation	J. Mavor	MOS devices: design and manufacture	A. D. Milne	1983	Wiley
Wafer Level Reliability Procedures to Monitor Gate Oxide Quality Using V Ramp and J Ramp Test Methodology	L. Lie and A. Kapoor	1995 International Integrated Reliability Workshop: final report, Stanford Sierra Camp, Lake Tahoe, California, October 22-25, 1995 /	Ieee Reliability Society	[1996], ©1996.	IEEE Service Center,
Gate Oxide Reliability: Physical and Computational Models	A. Ghetti	Predictive Simulation of Semiconductor Processing: Status and Challenges	Jarek Dabrowski; Eicke R. Weber	2004	Springer Berlin Heidelberg
Schottky Oxide Ramp Diodes		20. Electron Devices	John G. Webster (Editor)	1999	Wiley
Accurate and Efficient Design of Experiment for Ultra Thin Oxide Reliability Assessment-Application to a 20 A Gate	F. Monsieur, E. Vincent and D. Roy /[et al.]	2001 IEEE International Integrated Reliability Workshop final report: Stanford Sierra Camp, Lake Tahoe, California, October 15-18, 2001 /	Calif.) International Integrated Reliability Workshop (2001: Lake Tahoe	[2001], ©2001.	IEEE Reliability Society,
MOS: SOI & double gate		Noise and fluctuations: 19th International Conference on Noise and Fluctuations, ICNF 2007, Tokyo, Japan, 9-14 September 2007	International Conference on Noise and Fluctuations (19th 2007 Tokyo, Japan)	2007	American Institute of Physics
48 Electrical Characterisation of MOS Capacitance		Ic Fabrication Technology [Paperback]	BOSE	2011	MC GRAW HILL INDIA
Characterisation of oxide anodes for fuel cells	M. Aindow; C. J. Kiely	Electron Microscopy and Analysis 2001	M. Aindow; C. J. Kiely	2001	Routledge
Interface Trap Density Reduction and Oxide Profiling for Mos Capacitors with Fluorinated Gate Oxide Dielectrics	Dimitrios N. Kouvatsos; Ralph J. Jaccodine; Fred A. Stevie	The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2	B.E. Deal; C.R. Helms	1993	Springer US
326 Gate Oxide		CMOS VLSI Design: A Circuits and Systems Perspective	Weste, Neil H E; Harris, David Money	2010	Addison-Wesley
34 Gate Oxide		Semiconductor Manufacturing Technology	Chue San Yoo	2008	World Scientific Publishing
A New Mechanism for Gate Oxide Degradation	Chuan H. Liu, Thomas A. DeMassa and Julian J. Sanchez	1998 IEEE International Integrated Reliability Workshop final report: Stanford Sierra Camp, Lake Tahoe, California, October 12-15, 1998 /	International Integrated Reliability Workshop (1998 Lake Tahoe, Calif.); IEEE Reliability Society; Institute of Electrical and Electronics Engineers; IEEE Electron Devices Society; Ieee Reliability Society	[1998], ©1998.	IEEE Reliability Society,
Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications	L. K. Wang; C. C.-H. Hsu; W. Chang	The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2	B.E. Deal; C.R. Helms	1993	Springer US
Aluminium Oxide Film as Gate Dielectric for Organic FETs: Anodisation and Characterisation	X.-D. Dang; W. Plieth; S. Richter; M. Plötner; W.-J. Fischer	Physical and Chemical Aspects of Organic Electronics	Christof Wöll	2009	John Wiley & Sons
47 Silicon Oxide Characterisation		Ic Fabrication Technology [Paperback]	BOSE	2011	MC GRAW HILL INDIA
Oxide Reliability Issues	R. Degraeve	High Dielectric Constant Materials: VLSI MOSFET Applications	H.R. Huff; D.C. Gilmer	2005	Springer Berlin Heidelberg
Oxide Reliability Issu		High Dielectric Constant Materials: VLSI MOSFET Applications	G.D. Hutcheson (auth.), Dr. H.R. Huff, Dr. D.C. Gilmer (eds.)	2005	Springer-Verlag Berlin Heidelberg
Thin Oxide Reliability	J. S. Suehle and R. S. Hijab	1996 International Integrated Reliability Workshop final report: Stanford Sierra Camp, Lake Tahoe, California, October 20-23, 1996 /	International Integrated Reliability Workshop (1996 Lake Tahoe, California); Calif.) International Integrated Reliability Workshop (2001: Lake Tahoe; California) International Integrated Reliability Workshop (1996: Lake Tahoe	[1997], ©1997.	IEEE Reliability Society,
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